Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-Zno

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2378-2381

  Ip, K ^a   Baik, K H ^a   Heo, Y W ^a   Norton, D P ^a   Pearton, S J ^a   LaRoche, J R ^a   Luo, B ^a   Ren, F ^a   Zavada, J M ^b  

^a University of Florida   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; METALLIZING; MORPHOLOGY; OXIDATION; PLASMAS; PROFILOMETRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR METAL BOUNDARIES; SURFACE CLEANING; THERMAL EFFECTS; THERMODYNAMIC STABILITY; ZINC OXIDE;

CONTACT RESISTANCE; DEPTH PROFILING; INTERMETALLIC REACTIONS;

OHMIC CONTACTS;

EID: 0942267202     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1621651     Document Type: Article

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