Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement

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Volumn 1, Issue 11, 2005, Pages 1076-1081

  Hormozi Nezhad, Mohammad R ^a,b   Aizawa, Masato ^a,b   Porter Jr , Lon A ^c   Ribbe, Alexander E ^d   Buriak, Jillian M ^a,b,e  

^a UNIVERSITY OF ALBERTA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c WABASH COLLEGE   (United States)

^d PURDUE UNIVERSITY   (United States)

^e Department of Inorganic and Nanoscale Materials ^*  (Canada)

Author keywords

Galvanic displacement; Gold; Nanolithography; Nanoparticles; Semiconductors

Indexed keywords

GALVANIC DISPLACEMENT; METAL NANOPARTICLE-SEMICONDUCTOR INTERFACES; NANOPARTICLES; SHAPE-SELECTIVE SYNTHESIS;

NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL);

GOLD;

GALLIUM; GALLIUM ARSENIDE; GOLD; INDIUM; INDIUM PHOSPHIDE; ION; METAL; METAL NANOPARTICLE; NANOMATERIAL; NITROGEN; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE; SILICON; SURFACTANT;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY;

ARSENICALS; GALLIUM; GOLD; INDIUM; IONS; METAL NANOPARTICLES; METALS; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; NANOSTRUCTURES; NANOTECHNOLOGY; NITROGEN; PHOSPHINES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES; SURFACE-ACTIVE AGENTS;

EID: 33646701810     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200500121     Document Type: Article

References (45)

1. a) H. Zhang, R. C. Jin, C. A. Mirkin, Nano Lett. 2004, 4, 1493;
2. b) L A. Porter, H. C. Choi, A. E. Ribbe, J. M. Buriak, Nano Lett. 2002, 2, 1067;
3. c) F. Karadas, G. Ertas, E. Ozkaraogtu, S. Suzer, Langmuir 2005, 21, 437.
4. M. Aizawa, I. M. Buriak, J. Am. Chem. Soc. 2005, 127, 8932.
5. a) D. Niwa, T. Homma, T. Osaka, J. Phys. Chem. B 2004, 308, 9900;
6. b) L. Magagnin, R. Maboudian, C. Carraro, J. Phys. Chem. B 2002, 106, 401;
7. c) T. Zambelli, M. L. Munford, F. Pillier, M.-C. Bernard, P. Allongue, J. Electrochem. Soc. 2001, 148, C614;
8. d) G. Oskam, J. G. Long, A. Natarajan, P. C. Searson, J. Phys. D 1998, 31, 1927;
9. e) F. A. Harraz, T. Tsuboi, J. Sasano, T. Sakka, Y. H. Ogata.J. Electrochem. Soc. 2002, 149, C456;
10. f) P. Gorostiza, M. A. Kulandainathan, R. Díaz, F. Sanz, P. Allongue, J. R. Morante, J. Electrochem. Soc. 2000, 147, 1026;
11. g) X.-H. Sun, N.-B. Wong, C.-P. Li, S.-T. Lee, P.-S. G. Kim, T.-K. Sham, Chem. Mater. 2004, 16, 1143;
12. h) N. Takano, D. Niwa, T. Yamada, T. Osaka, Electrochim. Acta 2000, 45, 3263;
13. i) G. V. Kuznetsov, V. A. Skryshevsky, T. A. Vdovenkova, A. I. Tsyganova, P. Gorostiza, F. Sanz, J. Electrochem. Soc. 2001, 148, C528;
14. j) C. Carraro, L. Magagnin, R. Maboudian, Electrochim. Acta 2002, 47, 2583;
15. k) C. Kim, Y. Oikawa, J. Shin, H. Ozaki, Microelectron. J. 2003, 34, 607;
16. l) P. Gorostiza, P. Allongue, R. Díaz, J. R. Morante, F. Sanz, J. Phys. Chem. B 2003, 107, 6454.
17. M. Aizawa, A. F. Cooper, M. Malac, J. M. Buriak, Nano Lett. 2005, 5, 815.
18. a) T. K. Sau, C. J. Murphy, J. Am. Chem. Soc. 2004, 226, 8648;
19. b) F. Kim, S. Connor, H. Song, T. Kuykendall, P. Yang, Angew. Chem. 2004, 236, 3759;
20. Angew. Chem. Int. Ed. 2004, 43, 3673;
21. c) Z. Wei, F. P. Zamborini, Langmuir 2004, 20, 1130111304;
22. d)M. A. El-Sayed, Acc. Chem. Res. 2004, 37, 326;
23. e) Y. D. Yin, R. M. Rioux, C. K. Erdonmez, S. Hughes, G. A. Somorjai, A. P. Alivisatos, Science 2004, 304, 711;
24. f) M. A. El-Sayed, Acc. Chem. Res. 2001, 34, 257;
25. g) Y. Yin, R. M. Rioux, C. K. Erdonmez, S. Hughes, G. A. Somorjai, A. P. Alivisatos, Science 2004, 304, 711;
26. h) V. F. Puntes, D. Zanchet, C. K. Erdonmez, A. P. Alivisatos, J. Am. Chem. Soc. 2002, 224, 12874;
27. i) E. Prodan, C. Radloff, N.J. Halas, P. Nordlander, Science 2003, 302, 419;
28. j) S. Chen, Z. L Wang, J. Ballato, S. H. Foulger, D. L. Carroll, J. Am. Chem. Soc. 2003, 225, 13186;
29. k) C. Charnay, A. Lee, S.-Q. Man, C. E. Moran, C. Radloff, R. K. Bradley, N. J. Halas, J. Phys. Chem. B 2003, 207, 7327;
30. l) T. K. Sau, C. J. Murphy, Langmuir 2004, 20, 6414;
31. m) R. Jin, Y. Cao, C. A. Mirkin, K. L Kelly, G. C. Schatz, J. G. Zheng, Science 2001, 294, 1901;
32. n) Y. Sun, Y. Xia, Science 2002, 298, 2176;
33. o) K. K. Caswell, C. M. Bender, C. J. Murphy, Nano Lett. 2003, 3, 667;
34. p) V. Germain, J. Li, D. Ingert, Z. L. Wang, M. P. Pileni, J. Phys. Chem. A 2003; 207, 8717;
35. q) C. Xue, Z. Li, C. A. Mirkin, Small 2005, 2, 513.
36. a) I. Yagi, S. Idojiri, T. Awatani, K. Uosaki, J. Phys. Chem. A 2005, 209, 5021;
37. b) C. H. Wu, S. M. Liao, K. C. Chang, Mater. Sci. Eng. B 2005, 117, 205;
38. c) W. P. Giziewicz, C. G. Fonstad, J. Vac. Sci. Technol. A 2002, 20, 1052;
39. d) H. I. Chen, C. K. Hsiung, Y. I. Chou, Semicond. Sci. Technol. 2003, 18, 620.
40. L. A. D'Asaro, S. Nakahara, Y. Okinaka, J. Electrochem. Soc. 1980, 327, 1935.
41. J.A. Asencio, M. Pérez, M. José-Yacamán, Surf. Sci. 2000, 447, 73.
42. A.J. Mieszawska, F. P. Zamborini, Chem. Mater. 2005, 17, 3415.
43. P. L. Redmond, A. J. Hallock, L E. Brus, Nano Lett. 2005, 5, 131.
44. L A. Porter, A. E. Ribbe, J. M. Buriak, Nano Lett. 2003, 3, 1043.
45. H. Lim, C. Carraro, R. Maboudian, M.W. Pruessner, R. Ghodssi, Langmuir 2004, 20, 743.