Characterization of Pd-GaAs Schottky diodes prepared by the electroless plating technique

Semiconductor Science and Technology

Volumn 18, Issue 7, 2003, Pages 620-626

  Chen, Huey Ing ^a   Hsiung, Chien Kang ^a   Chou, Yen I ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PLATING TEMPERATURE; PLATING TIME; SCHOTTKY BARRIER HEIGHT;

COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLESS PLATING; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MORPHOLOGY; PALLADIUM; PARTICLE SIZE ANALYSIS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

SCHOTTKY BARRIER DIODES;

EID: 0038487664     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/7/304     Document Type: Article

References (25)

1. Nguyen C and Micovic M 2001 The state-of-the-art of GaAs and InP power devices and amplifiers IEEE Trans. Electron Devices 48 472
2. Baca A G, Hietala V M, Greenway D, Zolper J C, Dubbert D F, Sloan I R and Shul R J 1999 Self-aligned GaAs JFETs for low-power microwave amplifiers and RFICs IEEE Electron Lett. 35 308
3. 0.16GaAs pseudomorphic HEMT for Ka- and Q-band power applications IEEE Electron Device Lett. 14 456
4. Hasegawa H 1999 Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials Japan. J. Appl. Phys. 38 1098
5. Hara S, Terajr H and Kajimura K 1997 Control of Schottky and Ohmic interfaces by unpinning Fermi level Appl. Surf. Sci. 117-118 394
6. Uno S, Hashizume T, Kasai S, Wu N J and Hasegawa H 1999 0.86 eV platinum Schottky barrier on indium phosphide by in situ electrochemical process and its application to MESFETs Japan. J. Appl. Phys. 35 1258
7. Nie H Y and Nannichi Y 1991 Pd-on GaAs Schottky contact: its barrier height and response to hydrogen Japan. J. Appl. Phys. 30 906
8. Lechuga L M, Calle A, Golmayo D and Briones F 1992 Different catalytic metals (Pt, Pd, and Ir) for GaAs Schottky barrier sensors Sensors Actuators B 7 614
9. Hasegawa H, Sato T and Hashizume T 1997 Evolution mechanism of nearly pinning-free platinum/n-type indium phosphide interface with a high Schottky barrier height by in situ electrochemical process J. Vac. Sci. Technol. B 15 1227
10. Chen H I, Chou Y I and Chu C Y 2002 A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating Sensors Actuators B 85 10
11. Chen H I and Chou Y I 2003 A comparative study of hydrogen sensing performances between electroless plated and thermal evaporated Pd/InP Schottky diodes Semicond. Sci. Technol. 18 104
12. Shu J, Grandjean B P A and Kaliaguine S 1994 Morphological study of hydrogen permeable Pd membranes Thin Solid Film 252 26
13. Shu J, Grandjean B P A, Ghali A and Kaliaguine A 1993 Autocatalytic effects in electroless deposition of palladium J. Electrochem. Soc. 140 3175
14. Cheng Y S and Yeung K L 1999 Palladium-silver composite membranes by electroless plating technique J. Membr. Sci. 158 127
15. Yeung K L, Christiansen S C and Varma A 1999 Palladium composite membranes by electroless plating technique: relationships between plating kinetics, film, microstructure and membrane performance J. Membr. Sci. 159 107
16. Cheng Y S and Yeung K L 2001 Effects of electroless plating chemistry on the synthesis of palladium membranes J. Membr. Sci. 182 195
17. Sato T, Kasai S and Hasegawa H 2001 Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process Appl. Surf. Sci. 175-176 181
18. Wu N T, Hashizume T and Hasegawa H 1994 Formation of oxide-free nearly ideal Pt/GaAs Schottky barriers by novel in situ photopulse-assisted electrochemical process Japan. J. Appl. Phys. 33 936
19. Shu J, Grandjean B P A, Ghali A and Kaliaguine A 1993 Morphological study of hydrogen permeable Pd membranes J. Membr. Sci. 77 181
20. Sze M 1981 Physics of Semiconductor Devices (New York: Wiley) ch 2
21. Eftekhari G 1993 Variation in the effective Richardson constant of metal-GaAs and metal-InP contacts due to the effect of processing parameters Phys. Status Solidi 140 189
22. Sharma B L 1984 Metal-semiconductor Schottky Barrier Junctions and their Applications (New York: Plenum) ch 2
23. Poteat T L, Lalevic B, Kuliyev B, Yousuf M and Chen M 1983 MOS and Schottky diodes gas sensors using transition metal electrode J. Electron. Mater. 12 181
24. Kang H P and Gurbuz Y 1994 Comparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection J. Appl. Phys. 75 8175
25. Aspnes D E and Heller A 1983 Barrier height and leakage reduction in n-GaAs-platium group metal Schottky barriers upon exposure to hydrogen J. Vac. Sci. Technol. B 1 3 602