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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 1052-1056

Optoelectronic integration using aligned metal-to-semiconductor bonding

(2) Giziewicz, Wojciech P a Fonstad Jr , Clifton G a

a USA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; HETEROJUNCTIONS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

METAL TO SEMICONDUCTOR BONDING; PLANAR OPTOELECTRONIC INTEGRATED CIRCUIT;

INTEGRATED OPTOELECTRONICS;

EID: 0036565349 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1464838 Document Type: Article

Times cited : (7)

References (8)

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- Fonstad, C.G.¹

2
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3
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- (1995) Electron. Lett. , vol.31 , pp. 588
- Tan, I.-H.¹ Reaves, C.² Holmes A., Jr.³ Hu, E.L.⁴ Bowers, J.E.⁵ DenBaars, S.⁶

4
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- Sands, T.¹ Keramidas, V.G.² Gronsky, R.³ Washburn, J.⁴

5
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- (1992) J. Electron. Mater. , vol.21 , pp. 831
- Ivey, D.G.¹ Jian, P.² Bruce, R.³

6
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- (1986) J. Electrochem. Soc. , vol.133 , pp. 2390
- Singh, R.N.¹ Skelly, D.W.² Brown, D.M.³

7
- 0005981882
- (1996) Thin Solid Films , vol.29 , pp. 264
- Islam, M.S.¹ McNally, P.J.² Cameron, D.C.³ Herbert, P.A.F.⁴

8
- 0005982393
- Ph.D. thesis, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, January
- (2000)
- Ahadian, J.F.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.