Ni/Pd/Au ohmic contact for p-GaAs and its application in red RCLED

Materials Science and Engineering: B

Volumn 117, Issue 2, 2005, Pages 205-209

  Wu, Chih Hung ^a   Liao, Sen Mao ^b   Chang, Kai Cheng ^b  

^a INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

Gallium arsenide; Light emitting diodes; Metal semiconductor metal structures; Nickel

Indexed keywords

ACTIVATION ENERGY; ANNEALING; GOLD; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; MORPHOLOGY; NICKEL; OHMIC CONTACTS; PALLADIUM; THERMAL EFFECTS;

GALLIUM ARSENIDE; METAL-SEMICONDUCTOR-METAL STRUCTURES; OPTIMUM METALLURGICAL STRUCTURE; RESONANT CAVITY LIGHT EMITTING DIODES (RCLED);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 13544272564     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.11.021     Document Type: Article

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