Application of ultra low energy (ULE) SIMS to emerging diamond technologies

Surface and Interface Analysis

Volumn 38, Issue 4, 2006, Pages 422-425

  Guzman De La Mata B ^a   Dowsett, M G ^a   Tajani, A ^b   Schwitters, M ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b ELEMENT SIX LTD   (United Kingdom)

Author keywords

CVD; Decay length; Delta layers; Depth resolution; Single crystal diamond; ULE SIMS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; DOPING (ADDITIVES); SILICON; SINGLE CRYSTALS;

DECAY LENGTH; DELTA LAYERS; DEPTH RESOLUTION; SINGLE CRYSTAL DIAMOND; ULE-SIMS;

SECONDARY ION MASS SPECTROMETRY;

EID: 33646572259     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2135     Document Type: Conference Paper

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