High depth resolution SIMS analysis with low-energy grazing O2+ beams

Surface and Interface Analysis

Volumn 25, Issue 4, 1997, Pages 285-291

  Jiang, Zhi Xiong ^a   Alkemade, Paul F A ^a   Algra, Eelke ^a   Radelaar, S ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

B; Ge; High depth resolution; Si; SIMS

Indexed keywords

ELECTRODES; ION BEAMS; OXYGEN; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SPECTRUM ANALYSIS; ULTRATHIN FILMS;

DECELERATION ELECTRODES; DEPTH PROFILE ANALYSIS;

SECONDARY ION MASS SPECTROMETRY;

EID: 0031119037     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199704)25:4<285::AID-SIA235>3.0.CO;2-0     Document Type: Article

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