Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 489-492

  Magee, Charles W ^a   Jacobson, Dale ^b   Gossmann, Hans J ^b  

^a Evans East   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SPUTTERING;

NUCLEAR REACTION ANALYSIS; ULTRALOW-ENERGY ION IMPLANTS;

SEMICONDUCTING SILICON;

EID: 0034350497     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591217     Document Type: Article

References (7)

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3. S. Todorov, D. F. Downey, S. Daryanani, J. Chow, M. Maloni, and S. Marcus, Proceedings of the 5th International Conference on Thermal Processing of Semiconductors, September 1997.
4. Ion Beam Handbook for Materials Analysis, edited by J. W. Mayer and E. Rimini (Academic, New York, 1977), p. 120.
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6. C. W. Magee, G. R. Mount, S. P. Smith, B. Herner, and H-J. Gossmann, J. Vac. Sci. Technol. B, these proceedings.
7. M. G. Dowsett, G. A. Cooke, D. I. Eilliner, T. J. Ormsby, and A. Murrell, in Secondary Ion Mass Spectrometry, SIMS, IX, edited by G. Gillen, R. Lareau, J. Bennett, and F. Stevie (Wiley, New York, 1997), p. 285.