Sputtered depth scales of multi-layered samples with in situ laser interferometry: Arsenic diffusion in Si/SiGe layers

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 762-767

  Ronsheim, P A ^a   Loesing, R ^a   Madan, A ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Arsenic in SiGe; Depth profile; Depth scale calibration

Indexed keywords

ARSENIC; COMPOSITION; INTERFACES (MATERIALS); INTERFEROMETRY; ION BEAMS; LASER APPLICATIONS; SPUTTERING; X RAY ANALYSIS;

DEPTH PROFILES; DEPTH SCALE CALIBRATION; MULTI-LAYERED SAMPLES;

DIFFUSION IN SOLIDS;

EID: 2942590469     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.062     Document Type: Conference Paper

References (4)

1. Wittmaack K. Surf. Interf. Anal. 24:1996;389.
2. E. DeChambost, P. Monsallut, B. Rasser, M. Schuhmacher, in: Proceedings of the SIMS XIII, Nara, Japan, November 2001.
3. Ronsheim P., Murphy R.J. Study of pre-equilibrium sputter rates for ultra shallow depth profiling with secondary ion mass spectrometry. J. Vac. Sci. Technol. B. 18(1):2000;501-502.
4. A. Merkulov, O. Merkulova, E. De Chambost, M. Schumacher, in: Proceedings of the SIMS XIV, San Diego, CA, September 2003.