Quantitative analysis of the top 5 nm of boron ultra-shallow implants

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 851-854

  Bellingham, J ^a   Dowsett, M G ^a   Collart, E ^b   Kirkwood, D ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Applied Materials   (United Kingdom)

Author keywords

Quantification; Rapid transient processing; Transient behaviour; Ultra low energy SIMS; Ultra shallow profile

Indexed keywords

ANNEALING; DOSIMETRY; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SURFACE CHEMISTRY;

ULTRA-SHALLOW IMPLANTS;

ION IMPLANTATION;

EID: 12244313040     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00821-8     Document Type: Conference Paper

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