SIMS study of GaAsN/GaAs multiple quantum wells

Surface and Interface Analysis

Volumn 29, Issue 6, 2000, Pages 399-402

  Kudriavtsev, Yu ^a   Villegas, A ^a   Godines, A ^a   Ecker, P ^a   Asomoza, R ^a   Nikishin, S ^b   Jin, C ^b   Faleev, N ^b   Temkin, H ^b  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY ANALYSIS;

GALLIUM ARSENIC NITRIDE; NITRIDATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033727259     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200006)29:6<399::AID-SIA880>3.0.CO;2-X     Document Type: Article

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