Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3488-3492

  Lu, Wu ^a   Koester, Steven J ^b   Wang, Xie Wen ^c   Chu, Jack O ^b   Ma, Tso Ping ^c   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0034317405     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1321286     Document Type: Article

References (7)

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