Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1467-1474

  Cheng, C F ^a   Poon, Vincent M C ^a   Kok, C W ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Crystallization; Grain growth; Polysilicon; Thin film transistor

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; GRAIN GROWTH; NICKEL COMPOUNDS; POLYSILICON;

METAL-INDUCED-LATERAL-CRYSTALLIZATION (MILC);

THIN FILM TRANSISTORS;

EID: 0043166563     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813521     Document Type: Article

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