Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1065-1068

  Kanjanachuchai, S ^a   Bonar, J M ^b   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY;

SINGLE CHARGE TUNNELLING;

TRANSISTORS;

EID: 0033341818     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/309     Document Type: Article

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