A model for crystal growth during metal induced lateral crystallization of amorphous silicon

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 175-181

  Joshi, Amol R ^a   Krishnamohan, Tejas ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; DIFFUSION; NICKEL; NUCLEATION; RATE CONSTANTS; SILICA; SURFACE REACTIONS; THERMAL EFFECTS; THIN FILMS;

METAL INDUCED LATERAL CRYSTALLIZATION (MILC);

AMORPHOUS SILICON;

EID: 0037250142     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1526937     Document Type: Article

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