The revolution in SiGe: Impact on device electronics

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 9-17

  Harame, D L ^a   Koester, S J ^a   Freeman, G ^a   Cottrel, P ^a   Rim, K ^a   Dehlinger, G ^a   Ahlgren, D ^a   Dunn, J S ^a   Greenberg, D ^a   Joseph, A ^a   Anderson, F ^a   Rieh, J S ^a   Onge, S A S T ^a   Coolbaugh, D ^a   Ramachandran, V ^a   Cressler, J D ^b   Subbanna, S ^a  

^a IBM   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Device scaling; SiGe; SiGe BiCMOS; SiGe HBT

Indexed keywords

ADSORPTION; BIPOLAR INTEGRATED CIRCUITS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; FIELD EFFECT SEMICONDUCTOR DEVICES; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING;

DEVICE SCALING; SIGE; SIGE BICMOS; SIGE HBT;

SEMICONDUCTING SILICON;

EID: 10744224579     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.086     Document Type: Conference Paper

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