Velocity overshoot in zincblende and wurtzite GaN

Solid State Communications

Volumn 110, Issue 9, 1999, Pages 469-472

  Caetano, E W S ^a   Costa Filho, R N ^a   Freire, V N ^a   Da Costa, J A P ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON DRIFT VELOCITY; GALLIUM NITRIDE; VELOCITY OVERSHOOT; WURTZITE; ZINCBLENDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032631020     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00114-3     Document Type: Article

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