A complete analytical model of GaN MESFET for microwave frequency applications

Microelectronics Journal

Volumn 32, Issue 12, 2001, Pages 983-990

  Bose, S ^a   Kumar, Adarsh A ^a   Gupta, Simrata M ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

Analytical modelling; GaN; MESFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MICROWAVES; MODULATION; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

CUT-OFF FREQUENCY;

MESFET DEVICES;

EID: 0035545617     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00062-3     Document Type: Article

References (19)

1. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
2. GaN: Processing, defects, and devices
3. GaN FETs for microwave and high-temperature applications
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5. Metal semiconductor field effect transistor based on single crystal GaN
6. Microwave performance of GaN MESFETs
7. Reliability of GaN metal semiconductor field-effect transistor at high temperature
8. Sidegating effect of GaN MESFETs grown on sapphire substrate
9. High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
10. High-power GaN MESFET on sapphire substrate
11. Inductively coupled high-density plasma-induced etch damage of GaN MESFETs
12. Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFET's
13. Analytical models of ion-implanted GaAs FET's
14. A MESFET variable-capacitance model for GaAs integrated circuit simulation
15. Improved junction capacitance model for the GaAs MESFET
16. Optimal noise figure of microwave GaAs MESFET's