High performance deep submicron buried channel PMOSFET using P+ poly-Si spacer induced self-aligned ultra shallow junctions

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 905-908

  Chang, P S T ^a,b   Kohyama, Y ^a   Kakuma, M ^a   Sudo, A ^a   Asao, Y ^a   Kumagai, J ^a   Matsuoka, F ^a   Ishiuchi, H ^a   Sawada, S ^a  

^a TOSHIBA CORPORATION   (Japan)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; INVERSION LAYERS; MOSFET DEVICES; REFRACTORY METAL COMPOUNDS;

CHANNEL RESISTANCE; CURRENT DRIVABILITY; PARASITIC RESISTANCES; POLY SI GATE ELECTRODE; SHORT-CHANNEL EFFECT; SIDEWALL SPACER; ULTRA SHALLOW JUNCTION; WORK-FUNCTION DIFFERENCE;

POLYCRYSTALLINE MATERIALS;

EID: 84994646711     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307503     Document Type: Conference Paper

References (9)

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