Thickness metrology and end point control in W chemical vapor deposition process from SiH4/WF6 using in situ mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2351-2360

  Xu, Y ^a   Gougousi, T ^a,b   Henn Lecordier, L ^a   Liu, Y ^a   Cho, S ^a   Rubloff, G W ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MASS SPECTROMETRY; PROCESS CONTROL; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; TEMPERATURE; THICKNESS MEASUREMENT; TUNGSTEN COMPOUNDS;

REAL TIME MEASUREMENT; SILANE REDUCTION PROCESS; WAFER TEMPERATURE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0036883096     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1520555     Document Type: Article

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