Effects of plasma excitation and chemical pretreatment on adsorption of tungsten hexafluoride on silicon and silicon dioxide studied by X-ray photoelectron spectroscopy

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages 3670-3674

  Saito, Yoji ^a   Takagi, Teruo ^a,b  

^a SEIKEI UNIVERSITY   (Japan)

^b DAI NIPPON PRINTING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GAS ADSORPTION; PLASMA APPLICATIONS; SILICA; SILICON; SURFACE TREATMENT; SURFACES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ADSORBATES; CHEMICAL PRETREATMENT; HYDROFLUORIC ACID SOLUTION; PLASMA EXCITATION; TUNGSTEN HEXAFLUORIDE;

TUNGSTEN COMPOUNDS;

EID: 0030287281     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837269     Document Type: Article

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