Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 1988-1992

  Liu, H Y ^a   Sellers, I R ^a   Gutierrez M ^a   Groom, K M ^a   Soong, W M ^a   Hopkinson, M ^a   David, J P R ^a   Beanland, R ^b   Badcock, T J ^a   Mowbray, D J ^a   Skolnick, M S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Bookham Technology plc   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; GROUND STATE; MONOLAYERS; NUCLEATION; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; PROBABILITY; SAMPLING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

DOT-IN-A-WELL (DWELL) STRUCTURES; GROWTH TEMPERATURES; HIGH GROWTH TEMPERATURE SPACER LAYERS (HGTSL); OPTICAL EFFICIENCY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4344612111     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773378     Document Type: Article

References (20)

1. A. R. Kovsh, A. E. Zhukov, D. A. Livshits, A. Yu. Egorov, V. M. Ustinov, M. V. Maximov, Yu. G. Musikhin, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg, Electron. Lett. 35, 1161 (1999).
2. H. Y. Liu, M. Hopkinson, C. N. Harrison, M. J. Steer, R. Firth, I. R. Sellers, D. J. Mowbray, and M. S. Skolnick, J. Appl. Phys. 93, 2931 (2003).
3. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
4. N. N. Ledentsov, V. A. Shchukin, M. Grandmann, N. Kirstaedter, J. Bohrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, S. V. Zaitsev, N. Yu. Gordeev, Zh. I. Alferov, A. I. Borovkov, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gosele, and J. Heydenreich, Phys. Rev. B 54, 8743 (1996).
5. E. C. Le Ru, A. J. Bennett, C. Roberts, and R. Murry, J. Appl. Phys. 91, 1365 (2002).
6. N. N. Ledentsov, M. V. Maximov, D. Bimberg, T. Maka, C. M. S. Torres, I. L. Krestnikov, V. M. Lantratov, N. A. Cherkashin, Yu M. Musikhin, and Zh. I. Alferov, Semicond. Sci. Technol. 15, 604 (2000).
7. Y. Sugiyama, Y. Nakata, S. Muto, N. Horiguchi, T. Futatsugi, Y. Awano, and N. Yokoyama, Electron. Lett. 33, 1655 (1997).
8. V. M. Ustinov and A. E. Zhukov, Semicond. Sci. Technol. 15, R41 (2000).
9. P. B. Joyce, T. J. Krzyzewski, P. H. Steans. G. R. Bell, J. H. Neave, and T. S. Jones, J. Cryst. Growth 244, 39 (2002).
10. Q. Xie, P. Chen, and A. Madhukar, Appl. Phys. Lett. 65, 2051 (1994).
11. G. Biasiol and E. Kapon, Phys. Rev. Lett. 81, 2962 (1998).
12. A. Barabasi, Appl. Phys. Lett. 70, 2565 (1997).
13. Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).
14. H. Y. Liu, B. Xu, Y. H. Chen, D. Ding, and Z. G. Wang, J. Appl. Phys. 88, 5433 (2000).
15. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984 (1998).
16. A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, E. A. Semenova, Yu. M. Shernyakov, M. V. Maximov, D. A. Livshits, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov, J. Cryst. Growth 251, 729 (2003).
17. X. Huang, A. Stintz, C. P. Hains, G. T. Liu, J. Cheng, and K. J. Malloy, IEEE Photonics Technol. Lett. 12, 227 (2000).
18. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, IEEE Photonics Technol. Lett. 12, 230 (2000).
19. D. S. Sizov, M. V. Masksimov, A. F. Tsatsul'nikov, N. A. Cherkashin, N. V. Kryzhanovskaya, A. B. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, R. Selin, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov, Semiconductors 36, 1097 (2002).
20. M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. S. Sizov, Yu, M. Shemyakov, I. N. Kaiander, A. E. Zhukov, A. R. Kov, S. S. Mirkhirn, V. M. Ustinov, Zh. I. Alferov, R. Heitz, V. A. Shchukin, N. N. Ledentsov, D. Bimberg, Yu. G. Musikhin, and W. Neumann, Phys. Rev. B 62, 16671 (2000).