SCOPUS 정보 검색 플랫폼

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 178-181

Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: A simulation study

(5) Babiker, S a Asenov, A a Roy, S a Barker, J R a Beaumont, S P a

a UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; IONIC CONDUCTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

BREAKDOWN CHARACTERISTICS; CONTROL BUFFERS; PSEUDO-MORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; RF CHARACTERISTICS; SIMULATION STUDIES; STRAIN ENGINEERING; STRAINED CHANNELS; VIRTUAL SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33244458076 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IWCE.1998.742741 Document Type: Conference Paper

Times cited : (1)

References (11)

1
- 0031366219
- P. Huang, T. Huang, H. Wang, E. Lin, Y. Shu, G. Dow, R. Lai, M. Biedenbender & J. Elliott: IEEE Trans. Microwave Theory & Tech 45 (1997) 2418.
- (1997) IEEE Trans. Microwave Theory & Tech , vol.45 , pp. 2418
- Huang, P.¹ Huang, T.² Wang, H.³ Lin, E.⁴ Shu, Y.⁵ Dow, G.⁶ Lai, R.⁷ Biedenbender, M.⁸ Elliott, J.⁹

2
- 19244372084
- M. Sexl, G. Bohm, D Xu, H Heiss, S. Kraus, G. Trankle & G. Weimann: J. of Crystal Growth 175 (1997) 915.
- (1997) J. of Crystal Growth , vol.175 , pp. 915
- Sexl, M.¹ Bohm, G.² Xu, D.³ Heiss, H.⁴ Kraus, S.⁵ Trankle, G.⁶ Weimann, G.⁷

3
- 36549091551
- J. Thobel, L. Baudry, A. Cappy, P. Bourel and R. Fauquemberue: Appl. Phys Lett 46 (1990) 346.
- (1990) Appl. Phys Lett , vol.46 , pp. 346
- Thobel, J.¹ Baudry, L.² Cappy, A.³ Bourel, P.⁴ Fauquemberue, R.⁵

4
- 0029756421
- J. Dickmann, K. Riepe, A. Geyer, B. Maile, A. Schurr, M. Berg & H. Daembkes: Japanese J. of Appl. Phys-1 35 (1997) 10.
- (1997) Japanese J. of Appl. Phys-1 , vol.35 , pp. 10
- Dickmann, J.¹ Riepe, K.² Geyer, A.³ Maile, B.⁴ Schurr, A.⁵ Berg, M.⁶ Daembkes, H.⁷

5
- 0030193460
- J. Chen, A. Li, Y. Ren & Y. Chang: J. of Crystal Growth 164 (1996) 460.
- (1996) J. of Crystal Growth , vol.164 , pp. 460
- Chen, J.¹ Li, A.² Ren, Y.³ Chang, Y.⁴

6
- 0031207878
- C. Kopf, H. Kosina & S. Selberherr: Solid State Electronics 41 (1997) 1139.
- (1997) Solid State Electronics , vol.41 , pp. 1139
- Kopf, C.¹ Kosina, H.² Selberherr, S.³

7
- 0342980482
- W. Hoke, P. Lyman, J. Mosca, H. Hendriks & A. Torabi: J. Appl Phys 81 (1997) 968.
- (1997) J. Appl Phys , vol.81 , pp. 968
- Hoke, W.¹ Lyman, P.² Mosca, J.³ Hendriks, H.⁴ Torabi, A.⁵

8
- 0030151119
- S. Babiker, A. Asenov, J. R. Barker, S. P. Beaumont: Solid State Electronics 39 (1996) 629.
- (1996) Solid State Electronics , vol.39 , pp. 629
- Babiker, S.¹ Asenov, A.² Barker, J.R.³ Beaumont, S.P.⁴

9
- 0032139210
- S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont and J. R. Barker: IEEE Trans. Electron Devices 45 (1998) 1644.
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1644
- Babiker, S.¹ Asenov, A.² Cameron, N.³ Beaumont, S.P.⁴ Barker, J.R.⁵

10
- 0030287906
- S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont: IEEE Trans, on Elect Devices 43 (1996) 2032.
- (1996) IEEE Trans, on Elect Devices , vol.43 , pp. 2032
- Babiker, S.¹ Asenov, A.² Cameron, N.³ Beaumont, S.P.⁴

11
- 0029292268
- T. Gonzalez and D. Pardo: IEEE Trans. Electron Devices 42, (1990) 605.
- (1990) IEEE Trans. Electron Devices , vol.42 , pp. 605
- Gonzalez, T.¹ Pardo, D.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.