-
1
-
-
0025508607
-
0.49P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
-
Nov.
-
0.49P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures," IEEE Trans. Electron Devices, vol. 37, pp. 2141-2147, Nov. 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 2141-2147
-
-
Chan, Y.J.1
Pavlidis, D.2
Razeghi, M.3
Omnes, F.4
-
2
-
-
0027642194
-
Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers
-
Aug.
-
M. Takikawa and K. Joshin, "Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers," IEEE Electron Device Lett., vol. 14, pp. 406-408, Aug. 1993.
-
(1993)
IEEE Electron Device Lett.
, vol.14
, pp. 406-408
-
-
Takikawa, M.1
Joshin, K.2
-
3
-
-
0031103047
-
Low-voltage operation GaAs spike-gate power FET with high power-added efficiency
-
Mar.
-
T. Tanaka, H. Furukawa, H. Takenaka, T. Ueda, T. Fukui, and D. Ueda, "Low-voltage operation GaAs spike-gate power FET with high power-added efficiency," IEEE Trans. Electron Devices, vol. 44, pp. 354-359, Mar. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 354-359
-
-
Tanaka, T.1
Furukawa, H.2
Takenaka, H.3
Ueda, T.4
Fukui, T.5
Ueda, D.6
-
4
-
-
0029234881
-
2-HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy
-
2-HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy," Solid-State Electron., vol. 38, pp. 25-29, 1995.
-
(1995)
Solid-State Electron.
, vol.38
, pp. 25-29
-
-
Lu, S.S.1
Huang, C.L.2
Sun, T.P.3
-
5
-
-
0031268460
-
InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)
-
Nov.
-
W. C. Liu, S. Y. Cheng, J. H. Tsai, P. H. Lin, J. Y. Cheng, and W. C. Wang, "InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)," IEEE Electron Device Lett., vol. 18, pp. 515-517, Nov. 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 515-517
-
-
Liu, W.C.1
Cheng, S.Y.2
Tsai, J.H.3
Lin, P.H.4
Cheng, J.Y.5
Wang, W.C.6
-
6
-
-
0032048626
-
+)-GaInP/n-GaAs heterojunction camel-gate FET
-
+)-GaInP/n-GaAs heterojunction camel-gate FET," Electron Lett., vol. 34, pp. 814-815, 1998.
-
(1998)
Electron Lett.
, vol.34
, pp. 814-815
-
-
Lour, W.S.1
Chang, W.L.2
Young, S.T.3
Liu, W.C.4
-
8
-
-
0031381769
-
High-performance 19 GHz-band GaAs FET switches using LOXI (layered-oxide-isolation)-MESFET's
-
A. Kanda, S. Kodama, T. Furuta, T. Nittono, T. Ishibashi, and M. Muraguchi, "High-performance 19 GHz-band GaAs FET switches using LOXI (layered-oxide-isolation)-MESFET's," in IEEE GaAs IC Symp. Tech. Dig., 1997, pp. 62-65.
-
(1997)
IEEE GaAs IC Symp. Tech. Dig.
, pp. 62-65
-
-
Kanda, A.1
Kodama, S.2
Furuta, T.3
Nittono, T.4
Ishibashi, T.5
Muraguchi, M.6
-
9
-
-
0030391881
-
GaInP/GaAs HBT-IC chipset for 10 Gb/s optical receiver
-
T. Ihara, Y. Oikawa, T. Yamamoto, H. Tomofuji, H. Harmaro, H. Ohnishi, and Y. Watanabo, "GaInP/GaAs HBT-IC chipset for 10 Gb/s optical receiver," in IEEE GaAs IC Symp. Tech. Dig., 1996, pp. 262-265.
-
(1996)
IEEE GaAs IC Symp. Tech. Dig.
, pp. 262-265
-
-
Ihara, T.1
Oikawa, Y.2
Yamamoto, T.3
Tomofuji, H.4
Harmaro, H.5
Ohnishi, H.6
Watanabo, Y.7
-
10
-
-
0027626919
-
Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMT's
-
July
-
C. Tedesco, E. Zanoni, C. Canali, S. Bigliardi, M. Manfredi, D. C. Streit, and W. T. Anderson, "Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMT's," IEEE Trans. Electron Devices, vol. 40, pp. 1211-1214, July 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 1211-1214
-
-
Tedesco, C.1
Zanoni, E.2
Canali, C.3
Bigliardi, S.4
Manfredi, M.5
Streit, D.C.6
Anderson, W.T.7
-
11
-
-
0026852510
-
Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing
-
Apr.
-
S. R. Bahl and J. A. D. Alamo, "Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing," IEEE Electron Device Lett., vol. 13, pp. 195-197, Apr. 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, pp. 195-197
-
-
Bahl, S.R.1
Alamo, J.A.D.2
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