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Volumn 20, Issue 6, 1999, Pages 274-276

Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GAIN MEASUREMENT; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSCONDUCTANCE;

EID: 0032653921     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767096     Document Type: Article
Times cited : (22)

References (11)
  • 1
    • 0025508607 scopus 로고
    • 0.49P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
    • Nov.
    • 0.49P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures," IEEE Trans. Electron Devices, vol. 37, pp. 2141-2147, Nov. 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 2141-2147
    • Chan, Y.J.1    Pavlidis, D.2    Razeghi, M.3    Omnes, F.4
  • 2
    • 0027642194 scopus 로고
    • Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers
    • Aug.
    • M. Takikawa and K. Joshin, "Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers," IEEE Electron Device Lett., vol. 14, pp. 406-408, Aug. 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 406-408
    • Takikawa, M.1    Joshin, K.2
  • 3
    • 0031103047 scopus 로고    scopus 로고
    • Low-voltage operation GaAs spike-gate power FET with high power-added efficiency
    • Mar.
    • T. Tanaka, H. Furukawa, H. Takenaka, T. Ueda, T. Fukui, and D. Ueda, "Low-voltage operation GaAs spike-gate power FET with high power-added efficiency," IEEE Trans. Electron Devices, vol. 44, pp. 354-359, Mar. 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 354-359
    • Tanaka, T.1    Furukawa, H.2    Takenaka, H.3    Ueda, T.4    Fukui, T.5    Ueda, D.6
  • 4
    • 0029234881 scopus 로고
    • 2-HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy
    • 2-HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy," Solid-State Electron., vol. 38, pp. 25-29, 1995.
    • (1995) Solid-State Electron. , vol.38 , pp. 25-29
    • Lu, S.S.1    Huang, C.L.2    Sun, T.P.3
  • 5
    • 0031268460 scopus 로고    scopus 로고
    • InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)
    • Nov.
    • W. C. Liu, S. Y. Cheng, J. H. Tsai, P. H. Lin, J. Y. Cheng, and W. C. Wang, "InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)," IEEE Electron Device Lett., vol. 18, pp. 515-517, Nov. 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 515-517
    • Liu, W.C.1    Cheng, S.Y.2    Tsai, J.H.3    Lin, P.H.4    Cheng, J.Y.5    Wang, W.C.6
  • 11
    • 0026852510 scopus 로고
    • Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing
    • Apr.
    • S. R. Bahl and J. A. D. Alamo, "Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing," IEEE Electron Device Lett., vol. 13, pp. 195-197, Apr. 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 195-197
    • Bahl, S.R.1    Alamo, J.A.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.