Hydrogen-implantation induced blistering and layer transfer of LaAlO3 and sapphire

Electrochemical and Solid-State Letters

Volumn 2, Issue 5, 1999, Pages 238-239

  Huang, L J ^a   Tong, Q Y ^a,b   Gosele U ^a,c  

^a Duke University   (United States)

^b RTI INTERNATIONAL   (United States)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; HYDROGEN; LANTHANUM COMPOUNDS; SAPPHIRE; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; SUPERCONDUCTING FILMS;

BLISTERING; LAYER TRANSFER;

ION IMPLANTATION;

EID: 0032654425     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390796     Document Type: Article

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