Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

Electronics Letters

Volumn 35, Issue 8, 1999, Pages 675-676

  Hobart, K D ^a   Kub, F J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HYDROGEN; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS;

INSULATING SUBSTRATES;

SEMICONDUCTING FILMS;

EID: 0032642852     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990477     Document Type: Article

References (9)

1. BOOS, J.B., KRUPPA, W., BENNETT, B.R., PARK, D., KIRCHOEFER, S.W., BASSA, R., and DIETRICH, H.B.: 'AlSb/InAs HEMT's for low-voltage, high-speed applications', IEEE Trans., 1998, ED-45, (9), pp. 1869-1875
2. IVANOV, S.V., ALTUKHOV, P.D., ARGUNOVA, T.S., BAKUN, A.A., BUDZA, A.A., CHALDYSHEV, V.V., KOVALENKO, Y.A., KOP'EV, P.S., KUTT, R.N., MELTSERR, B.Y., RUVIMOV, S.S., SHAPOSHNIKOV, S.V., SOROKIN, L.M., and USTINOV, V.M.: 'Molecular beam epitaxy growth and characterization of thin (< 2μm) GaSb on GaAs(100) substrates', Semicond. Sci. Technol., 1993, 8, pp. 347-356
3. JALAGUIER, E., ASPAR, B., POCAS, S., MICHAUD, J.F., ZUSSY, M., PAPON, A.M., and BRUEL, M.: 'Transfer of 3 in GaAs film on silicon substrate by proton implantation process', Electron. Lett., 1998, 34, (4), pp. 408-409
4. BRUEL, M.: 'Silicon on insulator material technology', Electron. Lett., 1995, 31, (14), pp. 1201-1202
5. FARRENS, S.: 'Low temperature wafer bonding', Proc. Fourth Int. Symp. Semiconductor Wafer Bonding, 1998, Vol. 97-36, pp. 425-436
6. ZIEGLER, J.F., and MANOYAN, J.M.: 'The stopping of ions in compounds', Nucl. Instrum. Methods, 1988, B35, pp. 215-228
7. AUBERTON-HERVE, A.J., BRUEL, M., ASPAR, B., MALEVILLE, C., and MORICEAU, H.: 'SMART-CUT: The basic fabrication process for UNIBOND SOI wafers', IElCE Trans. Electron., 1997, E80-C, (3), pp. 358-363
8. HOBART, K.D., KUB, F.J., JERNIGAN, G.G., TWIGG, M.E., and THOMPSON, P.E.: 'Fabrication of SOI substrates with ultra-thin Si layers', Electron. Lett., 1998, 34, (12), pp. 1265-1266
9. HOBART, K.D., KUB, F.J., TWIGG, M.E., JERNIGAN, G.G., and THOMPSON, P.E.: 'Ultra-Cut: A simple technique for the fabrication of SOI substrates with ultra-thin (≤5nm) silicon films'. 1998 IEEE Int. SOI Conf. Proc., 1998, pp. 145-146