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Volumn 26, Issue 5, 1997, Pages 449-458

Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga ions

Author keywords

GaAs; Ion implantation; Point defects

Indexed keywords


EID: 0037581464     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0118-4     Document Type: Article
Times cited : (10)

References (35)
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    • Z. Liliental-Weber, W. Swider, K.M. Yu, J. Kortright, F.W. Smith and A.R. Calawa, Appl. Phys. Lett. 58, 2153 (1991); Z. Liliental-Weber, S. Gupta, F. Smith, Semi-Insulating III-V Materials, Ixtapa, Mexico, eds. C.J. Miner, W. Ford and E.R. Weber, (Bristol: Institute of Physics Publishing, 1992), p. 135.
    • (1992) Semi-Insulating III-V Materials , pp. 135
    • Liliental-Weber, Z.1    Gupta, S.2    Smith, F.3
  • 24
    • 0027866957 scopus 로고    scopus 로고
    • Z. Liliental-Weber, K.M. Yu, J. Washburn and D.C. Look, 22, 1395 (1993)
    • Z. Liliental-Weber, K.M. Yu, J. Washburn and D.C. Look, 22, 1395 (1993).
  • 30
    • 0007619911 scopus 로고
    • ed. E.M. Anastasskis and J.D. Joannopoulos Singapore: World Scientific
    • M. Kaminska and E.R. Weber, The Physics of Semiconductors, ed. E.M. Anastasskis and J.D. Joannopoulos (Singapore: World Scientific, 1990), p. 473.
    • (1990) The Physics of Semiconductors , pp. 473
    • Kaminska, M.1    Weber, E.R.2
  • 35
    • 3843114318 scopus 로고    scopus 로고
    • PhD. thesis, University of California, Berkeley
    • A. Prasad, PhD. thesis, University of California, Berkeley 1996.
    • (1996)
    • Prasad, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.