메뉴 건너뛰기




Volumn 68, Issue 11, 1996, Pages 1501-1503

Recrystallization of high energy As-implanted GaAs studied by transmission electron microscopy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 1542398484     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115679     Document Type: Article
Times cited : (8)

References (15)
  • 12
    • 22244435730 scopus 로고    scopus 로고
    • Pearson's Handbook of Crystallographic Data, edited by P. Villars and L. D. Calvert (ASM International-The Materials Information Society, Materials Park, OH, 1991), Vol. 1, p. 141.
    • Pearson's Handbook of Crystallographic Data, edited by P. Villars and L. D. Calvert (ASM International-The Materials Information Society, Materials Park, OH, 1991), Vol. 1, p. 141.
  • 14
    • 22244471182 scopus 로고    scopus 로고
    • A. Claverie and Z. Liliental-Weber, Philos. Mag. 65, 981 (1991).
    • A. Claverie and Z. Liliental-Weber, Philos. Mag. 65, 981 (1991).
  • 15
    • 22244446889 scopus 로고    scopus 로고
    • S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaP (Wiley, New York, 1992).
    • S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaP (Wiley, New York, 1992).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.