Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 4012-4018

  Weng, X ^a   Clarke, S J ^a   Ye, W ^a   Kumar, S ^a   Goldman, R S ^a   Daniel, A ^a   Clarke, R ^a   Holt, J ^a   Sipowska, J ^a   Francis, A ^a   Rotberg, V ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; COARSENING PROCESS; EPITAXIAL GAAS; FUNDAMENTAL BAND GAP; N ION IMPLANTATION; NANOMETER-SIZED CRYSTALLITES; NEAR-INFRARED RANGE; SELF-SIMILAR; STRUCTURAL AND OPTICAL PROPERTIES; ZINC-BLENDE;

GALLIUM NITRIDE; ION IMPLANTATION; OPTICAL PROPERTIES; OSTWALD RIPENING; RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC SULFIDE;

NANOSTRUCTURES;

EID: 18644375514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504177     Document Type: Article

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