Three-layer photocarrier radiometry model of ion-implanted silicon wafers

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7832-7840

  Li, Bincheng ^a,b   Shaughnessy, Derrick ^a   Mandelis, Andreas ^a,b   Batista, Jerias ^a,c   Garcia, Jose ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b Photo Thermal Diagnostics Inc   (Canada)

^c FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DENSITOMETERS; DIFFUSION; FUNCTIONS; ION IMPLANTATION; MASS SPECTROMETRY; MATHEMATICAL MODELS; RADIOMETERS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

IMPLANTATION DOSES; PHOTOCARRIER RADIOMETRY (PCR); SECOND-ION MASS SPECTROMETRY (SIMS); SPREADING RESISTANCE PROFILING (SRP);

SILICON WAFERS;

EID: 3142705999     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1748862     Document Type: Article

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