Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4077-4079

  Batista, Jerias ^a,b   Mandelis, Andreas ^a   Shaughnessy, Derrick ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b FEDERAL UNIVERSITY OF MARANHÃO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; DIFFUSION; ELECTRON ENERGY LEVELS; INFRARED DEVICES; RADIOMETRY; SEMICONDUCTOR DOPING;

PHOTOCARRIER RADIOMETRY;

SILICON WAFERS;

EID: 0038505252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1582376     Document Type: Article

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