Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5244-5250

  Shaughnessy, Derrick ^a   Mandelis, Andreas ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ALGORITHMS; CARRIER CONCENTRATION; DIFFUSION; ELECTRONIC PROPERTIES; INFRARED RADIATION; LASER BEAMS; PERTURBATION TECHNIQUES; PROFILOMETRY; RADIOMETRY; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; TRANSPORT PROPERTIES;

PHOTOTHERMAL RADIOMETRY (PTR); SURFACE RECOMBINATION VELOCITY;

SILICON WAFERS;

EID: 0037598811     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565491     Document Type: Article

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