Noncontacting photothermal radiometry of SiO2/Si MOS capacitor structures

Solid-State Electronics

Volumn 41, Issue 4, 1997, Pages 591-597

  Salnick, A ^a   Jean, C ^b   Mandelis, A ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b Mitel Networks Corporation   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; FREQUENCY DOMAIN ANALYSIS; FREQUENCY RESPONSE; INTERFACES (MATERIALS); RADIOMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

INFRARED PHOTOTHERMAL RADIOMETRIC (PTR) METHOD;

MOS DEVICES;

EID: 0031119972     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00107-4     Document Type: Article

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