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Volumn 17, Issue 4, 2004, Pages 489-496

Contact hole resist solutions for 45-90nm node design rules

Author keywords

193nm contact resists; RELACS

Indexed keywords

ANALYTICAL ERROR; ARTICLE; CHROMELESS PHASE LITHOGRAPHY; ELECTRONICS; FLOW; MATERIALS; TECHNIQUE; TECHNOLOGY;

EID: 3142543739     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.17.489     Document Type: Article
Times cited : (10)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.