ArF single layer photoresists based on alkaline-developable ROMP-H resin

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 26-31

  Suwa, Mitsuhito ^a   Iwasawa, Haruo ^a   Kajita, Toru ^a   Yamamoto, Masafumi ^a   Iwanaga, Shin Ichiro ^a  

^a JSR CORPORATION   (Japan)

Author keywords

ArF photoresists; Norbornenes with ester group; ROMP H resins

Indexed keywords

ESTERIFICATION; ESTERS; GROUP TECHNOLOGY; HYDROGENATION; KRYPTON; MICROMETERS; MONOMERS; PHOTORESISTORS; PHOTORESISTS; POLYMERS; RING OPENING POLYMERIZATION; SURFACE TREATMENT; THICKNESS MEASUREMENT; TRANSPARENCY;

ALICYCLIC POLYMERS; ALKALINE-DEVELOPABLE; ARF PHOTORESISTS; DEEP UV RESISTS; DEVELOPABILITY; DOUBLE BONDS; ETCH RESISTANCES; HIGH TRANSPARENCIES; NORBORNENES WITH ESTER GROUP; POLYMER MAIN CHAINS; RING-OPENING METATHESIS POLYMERIZATIONS; ROMP-H RESINS; SINGLE LAYER PHOTORESISTS;

RESINS;

EID: 60949092321     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312419     Document Type: Conference Paper

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