0.1 μm level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (RELACS)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 333-336

  Toyoshima, Toshiyuki ^a   Ishibashi, Takeo ^a   Minanide, Ayumi ^a   Sugino, Kanji ^a   Katayama, Keiichi ^a   Shoya, Takayuki ^a   Arimoto, Ichiro ^a   Yasuda, Naoki ^a   Adachi, Hiroshi ^a   Matsui, Yasuji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKING; EXCIMER LASERS; SEMICONDUCTOR DEVICE MANUFACTURE; SHRINKAGE;

HOLE PATTERN FORMATION; RESOLUTION ENHANCEMENT LITHOGRAPHY ASSISTED BY CHEMICAL SHRINK;

PHOTOLITHOGRAPHY;

EID: 17344380149     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)