Advanced RELACS™ (resolution enhancement of lithography by assist of chemical shrink) material for 193nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 195-206

  Hong, Sungeun ^a   Takano, Yusuke ^a   Kanda, Takashi ^b   Kudo, Takanori ^c   Padmanaban, Munirathna ^c   Tanaka, Hatsuyuki ^a   Lee, Si Hyeung ^d   Lee, Jung Hyeon ^d   Woo, Sang Gyun ^d  

^a SÜD CHEMIE AG   (Germany)

^b IMEC   (Belgium)

^c CLARIANT CORPORATION   (United States)

^d SAMSUNG Electronics   (South Korea)

Author keywords

193nm resists; Iso dense bias; LER; LWS; RELACS ; RET; Shrinkage

Indexed keywords

DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; IRRADIATION; MIXING; PHOTORESISTS; SHRINKAGE; SURFACE ROUGHNESS;

CONTACT HOLE; ISO DENSE BIAS; MIXING BAKE TEMPERATURE; SHRINKAGE LINEARITY; SIDE LOBE;

LITHOGRAPHY;

EID: 0141834799     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485155     Document Type: Conference Paper

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