Contact printing to the 45 nm node using a binary mask and 248 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 I, Issue , 2003, Pages 277-290

  Suhm, Karen ^a   Baker, Dan ^a   Hesse, Brian ^a   Clark, Kevin ^a   Coleman, Scott ^b  

^a MICROCHIP TECHNOLOGY INC   (United States)

^b Canon USA   (United States)

Author keywords

50 nm contacts; DUV lithography; Ideal smile; Safier

Indexed keywords

COST EFFECTIVENESS; IMAGE ENHANCEMENT; IMAGING TECHNIQUES; MASKS; MECHANICAL PROPERTIES; OPTICAL PROPERTIES; PRINTING; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC PROPERTIES; ULTRAVIOLET RADIATION;

BINARY MASK; CONTACT PRINTING; NUMERICAL APERTURE; POST-DEVELOP THERMAL PROCESSING; RESOLUTION ENHANCEMENT TECHNIQUE; SEMICONDUCTOR INDUSTRY;

PHOTORESISTS;

EID: 0141499977     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485102     Document Type: Conference Paper

References (9)

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