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Volumn 5039 II, Issue , 2003, Pages 789-797
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Below 70-nm contact hole pattern with RELACS process on ArF resist
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Author keywords
193nm lithography; Chemically amplified resist; Contact hole pattern; Photoacid generator; RELACS ; Shrink technology
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Indexed keywords
ACIDS;
ADDITIVES;
ARGON;
CATALYSIS;
CROSSLINKING;
KRYPTON;
PHOTOLITHOGRAPHY;
PHOTORESISTS;
REACTION KINETICS;
SHRINKAGE;
TEMPERATURE;
CHEMICALLY AMPLIFIED RESISTS;
CONTACT HOLE PATTERN;
CROSSLINKING ACCELERATOR;
MIXING BAKE;
PHOTOACID GENERATOR;
RESOLUTION ENHANCEMENT LITHOGRAPHY ASSISTED CHEMICAL SHRINK;
SHRINK TECHNOLOGY;
LITHOGRAPHY;
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EID: 0141834128
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.485167 Document Type: Conference Paper |
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Times cited : (14)
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References (9)
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