Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow- k dielectric for copper interconnects

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2034-2040

  Chen, J Y ^a   Pan, F M ^a   Chang, L ^a   Cho, A T ^b   Chao, K J ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHOBICITY; SILICA; SURFACE ACTIVE AGENTS; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SILICA FILMS; THERMAL DESORPTION SPECTROSCOPY;

MESOPOROUS MATERIALS;

EID: 31144472544     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2050656     Document Type: Article

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