Strain Modification of GaN in AlGaN/GaN Epitaxial Films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 PART 2, 1999, Pages 498-500

  Steude, Guido ^a   Meyer, Bruno K ^a   Göldner, Axel ^b   Hoffmann, Axel ^b   Kaschner, Axel ^b   Bechstedt, Friedhelm ^c   Amano, Hiroshi ^d   Akasaki, Isamu ^d  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^d MEIJO UNIVERSITY   (Japan)

Author keywords

Algan; Gan; Heterostructure; Stress and strain

Indexed keywords

EID: 0001395590     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l498     Document Type: Article

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