Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1371-1375

  Patsis, G P ^a   Gogolides, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION FRACTION; LINE-EDGE ROUGHNESS (LER); PHOTOACIDS;

ALGORITHMS; COMPUTER SIMULATION; DIFFUSION; DISSOLUTION; IONIZATION; LITHOGRAPHY; POLYMERIZATION;

PHOTORESISTS;

EID: 31144439028     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1990165     Document Type: Article

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