Line edge roughness and photoresist percolation development model

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 112-117

  Ma, Yuansheng ^a   Shin, J ^a   Cerrina, Franco ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; LIGHT ABSORPTION; PERCOLATION (SOLID STATE); PHOTONS; POISSON DISTRIBUTION; STATISTICAL METHODS; SURFACE ROUGHNESS; X RAY LITHOGRAPHY;

CHEMICALLY AMPLIFIED RESIST; LINE EDGE ROUGHNESS; NORMALIZED RESIST THICKNESS; THREE DIMENSIONAL DISSOLUTION PERCOLATION MODEL;

PHOTORESISTS;

EID: 0037207694     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1534572     Document Type: Article

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