An accurate method for determining intrinsic optical absorption in indirect band gap semiconductors

Solid State Communications

Volumn 108, Issue 8, 1998, Pages 561-566

  Grivickas, Vytautas ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

A. semiconductors; D. optical properties; E. time resolved optical spectroscopies

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON TRANSITIONS; ENERGY GAP; LIGHT ABSORPTION; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING SILICON; SILICON CARBIDE; SPECTROSCOPY;

INDIRECT BAND GAP SEMICONDUCTORS; TIME RESOLVED OPTICAL SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 0032180247     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00413-X     Document Type: Article

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