Influence of AlN nucleation layer growth conditions on quality of GaN layers deposited on (0 0 0 1) sapphire

Journal of Crystal Growth

Volumn 240, Issue 3-4, 2002, Pages 347-354

  Gonsalves, Mario ^a   Kim, Wook ^a   Narayanan, Vijay ^a   Mahajan, S ^a  

^a Arizona State University   (United States)

Author keywords

A1. Defects; A1. Nucleation; A3. Organometallic vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; DEPOSITION; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NUCLEATION LAYER (NL) GROWTH;

CRYSTAL GROWTH;

EID: 0036570470     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00906-5     Document Type: Article

References (14)