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Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 433-436

Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy

(6) Ebel, R a Fehrer, M a Figge, S a Einfeldt, S a Selke, H a Hommel, D a

a UNIVERSITY OF BREMEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032659917 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01369-4 Document Type: Article

Times cited : (17)

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