Effects of ion irradiation in the thermal oxidation of SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 15, 2002, Pages 1554371-1554377

  Radtke, C ^a   Baumvol, I J R ^a   Stedile, F C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ION; SILICON CARBIDE; SILICON DIOXIDE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; CRYSTALLOGRAPHY; FILM; IRRADIATION; MATERIALS; MATERIALS TESTING; OXIDATION; PHYSICS;

EID: 20744454019     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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21. 2) yielding the areal density of Si. To determine the amount of Si in the irradiated layer before oxidation, we simulated the channeled RBS spectrum of the asirradiated sample as shown in Fig. 2. Simulation using the RUMP (Ref. 15) code consists of assuming a certain areal density of a material with a defined stoichiometry and stopping power; analyzed under certain experimental conditions (beam energy, beam ion, incident charge, detector geometry, resolution, and solid angle). Then, the program generates a theoretical spectrum that should be compared to experimental data. In this way we determined the areal density of Si in the amorphized layer, since in the single crystal the alignment of atoms respective to the incident beam makes the detected ion yield to decrease