Characterization of an enhanced thermal oxide layer on 6H-SiC using ion irradiation

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 502-505

  Yoneda, T ^a   Nakata, T ^a   Watanabe, M ^a   Kitabatake, M ^b  

^a Ion Engineering Institute Corporation   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Enhanced thermal oxide layer; Ion irradiation; Oxidation rate

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); ION BOMBARDMENT; RADIATION DAMAGE; REACTION KINETICS; REFRACTIVE INDEX; SILICA; SILICON CARBIDE; THERMOOXIDATION;

BOND BREAKAGE; THERMAL OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0000558251     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00462-0     Document Type: Article

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