Bonding, defects, and defect dynamics in the SiC-SiO2 system

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Pantelides, S T ^a   Buczko, R ^a   Di Ventra, M ^a   Wang, S ^a   Kim, S G ^a   Pennycook, S J ^a   Duscher, G ^a   Feldman, L C ^a   McDonald, K ^a   Chanana, R K ^a   Weller, R A ^a   Williams, J R ^a   Chung, G Y ^a   Tin, C C ^a   Isaacs Smith, T ^a  

^a Institute of Physical Chemistry   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; DEFECTS; DYNAMICS; ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN; NITROGEN; OXIDATION; PASSIVATION; SILICA; SILICON CARBIDE;

DEFECT DYNAMICS; FIRST PRINCIPLE THEORY; INTERFACE DEFECT; INTERFACE TRAP DENSITY; REOXIDATION; SILICON CARBIDE-SILICA INTERFACE; Z CONTRAST IMAGING;

INTERFACES (MATERIALS);

EID: 0034861963     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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