Dose dependence of the enhancement of thermal oxidation for 6H-SiC by 30 keV 18O+ and 20Ne+ irradiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6262-6265

  Yoneda, Tomoaki ^a   Nakata, Toshitake ^a   Kitabatake, Makoto ^b   Kido, Yoshiaki ^c  

^a Ion Eng Res Institute Corporation   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Damage; ESR; Ion irradiation; Oxidation; RBS; Si face; SiC

Indexed keywords

AMORPHIZATION; ANNEALING; CHEMICAL BONDS; DIFFUSION IN SOLIDS; ION BEAMS; ION BOMBARDMENT; NEON; OXYGEN; PARAMAGNETIC RESONANCE; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMOOXIDATION;

ION IRRADIATION;

SILICON CARBIDE;

EID: 0032206207     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6262     Document Type: Article

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